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| PROFET(R) BTS 442 E2 Smart Highside Power Switch * Overload protection * Current limitation * Short-circuit protection * Thermal shutdown * Overvoltage protection (including load dump) * Fast demagnetization of inductive loads * Reverse battery protection1) * Undervoltage and overvoltage shutdown with auto-restart and hysteresis * Open drain diagnostic output * Open load detection in ON-state * CMOS compatible input * Loss of ground and loss of Vbb protection2) * Electrostatic discharge (ESD) protection Features Product Summary Overvoltage protection Operating voltage On-state resistance Load current (ISO) Current limitation Vbb(AZ) Vbb(on) RON IL(ISO) IL(SCr) 63 V 4.5 ... 42 V 18 m 21 A 70 A TO-220AB/5 5 5 1 Straight leads 1 5 Standard SMD * C compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads * All types of resistive, inductive and capacitve loads * Replaces electromechanical relays and discrete circuits Application General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOS chip on chip technology. Providing embedded protective functions. R bb + V bb Voltage source V Logic Voltage sensor 3 Overvoltage protection Current limit Gate protection OUT Charge pump Level shifter Rectifier Limit for unclamped ind. loads Open load 2 IN Temperature sensor 5 ESD Logic Load detection Short circuit detection GND 4 ST PROFET Load GND 1 Signal GND 1) 2) No external components required, reverse load current limited by connected load. Additional external diode required for charged inductive loads Semiconductor Group 1 of 14 2003-Oct-01 BTS 442 E2 Pin 1 2 3 4 5 Symbol GND IN Vbb ST OUT (Load, L) I + S O Function Logic ground Input, activates the power switch in case of logical high signal Positive power supply voltage, the tab is shorted to this pin Diagnostic feedback, low on failure Output to the load Maximum Ratings at Tj = 25 C unless otherwise specified Parameter Supply voltage (overvoltage protection see page 3) Load dump protection VLoadDump = UA + Vs, UA = 13.5 V RI= 2 , RL= 1.1 , td= 200 ms, IN= low or high Load current (Short-circuit current, see page 4) Operating temperature range Storage temperature range Power dissipation (DC) Inductive load switch-off energy dissipation, single pulse Tj=150 C: Electrostatic discharge capability (ESD) (Human Body Model) Input voltage (DC) Current through input pin (DC) Current through status pin (DC) see internal circuit diagrams page 6... Symbol Vbb VLoad dump3) IL Tj Tstg Ptot EAS VESD VIN IIN IST Values 63 80 self-limited -40 ...+150 -55 ...+150 167 2.1 2.0 -0.5 ... +6 5.0 5.0 0.75 75 tbd Unit V V A C W J kV V mA Thermal resistance chip - case: junction - ambient (free air): SMD version, device on pcb4): RthJC RthJA K/W 3) 4) VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for Vbb connection. PCB is vertical without blown air. Semiconductor Group 2 2003-Oct-01 BTS 442 E2 Electrical Characteristics Parameter and Conditions at Tj = 25 C, Vbb = 12 V unless otherwise specified Symbol Values min typ max Unit Load Switching Capabilities and Characteristics On-state resistance (pin 3 to 5) IL = 5 A Tj=25 C: RON Tj=150 C: Nominal load current (pin 3 to 5) ISO Proposal: VON = 0.5 V, TC = 85 C Output current (pin 5) while GND disconnected or GND pulled up, VIN= 0, see diagram page 7, Tj =-40...+150C Turn-on time to 90% VOUT: Turn-off time to 10% VOUT: RL = 12 , Tj =-40...+150C Slew rate on 10 to 30% VOUT, RL = 12 , Tj =-40...+150C Slew rate off 70 to 40% VOUT, RL = 12 , Tj =-40...+150C Operating Parameters Operating voltage 5) Tj =-40...+150C: Undervoltage shutdown Tj =-40...+150C: Undervoltage restart Tj =-40...+150C: Undervoltage restart of charge pump see diagram page 12 Tj =-40...+150C: Undervoltage hysteresis Vbb(under) = Vbb(u rst) - Vbb(under) Overvoltage shutdown Tj =-40...+150C: Overvoltage restart Tj =-40...+150C: Overvoltage hysteresis Tj =-40...+150C: Overvoltage protection6) Tj =-40C: Tj =25...+150C: Ibb=40 mA Standby current (pin 3) Tj=-40...+25C: VIN=0 Tj=150C: Leakage output current (included in Ibb(off)) VIN=0 Operating current (Pin 1)7), VIN=5 V IL(ISO) IL(GNDhigh) 17 --15 28 21 -18 35 -1 m A mA s ton toff dV /dton -dV/dtoff 100 10 0.2 0.4 ----- 350 130 2 5 V/s V/s Vbb(on) Vbb(under) Vbb(u rst) Vbb(ucp) Vbb(under) Vbb(over) Vbb(o rst) Vbb(over) Vbb(AZ) Ibb(off) IL(off) IGND 4.5 2.4 ---42 42 -60 63 ----- ---6.5 0.2 --0.2 -67 12 18 6 1.1 42 4.5 4.5 7.5 -52 ---25 60 --- V V V V V V V V V A A mA 5) 6) 7) At supply voltage increase up to Vbb= 6.5 V typ without charge pump, VOUT Vbb - 2 V see also VON(CL) in table of protection functions and circuit diagram page 7. Meassured without load. Add IST, if IST > 0, add IIN, if VIN>5.5 V Semiconductor Group 3 2003-Oct-01 BTS 442 E2 Parameter and Conditions at Tj = 25 C, Vbb = 12 V unless otherwise specified Symbol Values min typ max Unit Protection Functions8) Initial peak short circuit current limit (pin 3 to 5)9), IL(SCp) ( max 400 s if VON > VON(SC) ) Tj =-40C: Tj =25C: Tj =+150C: Repetitive short circuit current limit IL(SCr) Tj = Tjt (see timing diagrams, page 10) Short circuit shutdown delay after input pos. slope VON > VON(SC), Tj =-40..+150C: td(SC) min value valid only, if input "low" time exceeds 30 s --45 30 80 -95 -70 -- 140 ---400 A A s V V C K J Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL), IL= 30 mA Short circuit shutdown detection voltage (pin 3 to 5) Thermal overload trip temperature Thermal hysteresis Inductive load switch-off energy dissipation10), Tj Start = 150 C, single pulse Vbb = 12 V: Vbb = 24 V: Reverse battery (pin 3 to 1) 11) Integrated resistor in Vbb line Diagnostic Characteristics Open load detection current (on-condition) VON(CL) VON(SC) Tjt --150 --- 58 8.3 -10 -- ----2.1 1.7 1.2 32 -- Tjt EAS ELoad12 ELoad24 -Vbb Rbb --- -120 V Tj=-40 C: IL (OL) Tj=25..150C: 2 2 --- 1900 1500 mA 8) 9) 10) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. Short circuit current limit for max. duration of td(SC) max=400 s, prior to shutdown While demagnetizing load inductance, dissipated energy in PROFET is EAS= VON(CL) * iL(t) dt, approx. VON(CL) 2 ), see diagram page 8 EAS= 1/2 * L * IL * ( VON(CL) - Vbb 11) Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load. Reverse current IGND of 0.3 A at Vbb= -32 V through the logic heats up the device. Time allowed under these condition is dependent on the size of the heatsink. Reverse IGND can be reduced by an additional external GND-resistor (150 ). Input and Status currents have to be limited (see max. ratings page 2 and circuit page 7). Semiconductor Group 4 2003-Oct-01 BTS 442 E2 Parameter and Conditions at Tj = 25 C, Vbb = 12 V unless otherwise specified Symbol Values min typ max Unit Input and Status Feedback12) Input turn-on threshold voltage Tj =-40..+150C: Input turn-off threshold voltage Tj =-40..+150C: Input threshold hysteresis Off state input current (pin 2), VIN = 0.4 V On state input current (pin 2), VIN = 3.5 V Status invalid after positive input slope (short circuit) Tj=-40 ... +150C: Status invalid after positive input slope (open load) Tj=-40 ... +150C: Status output (open drain) Zener limit voltage Tj =-40...+150C, IST = +1.6 mA: ST low voltage Tj =-40...+150C, IST = +1.6 mA: VIN(T+) VIN(T-) VIN(T) IIN(off) IIN(on) td(ST SC) td(ST) 1.5 1.0 -1 10 80 350 --0.5 -25 200 -- 2.4 --30 50 400 1600 V V V A A s s VST(high) VST(low) 5.4 -- 6.1 -- -0.4 V 12) If a ground resistor RGND is used, add the voltage drop across this resistor. Semiconductor Group 5 2003-Oct-01 BTS 442 E2 Truth Table Inputlevel Normal operation Open load Short circuit to GND Short circuit to Vbb Overtemperature Undervoltage Overvoltage L = "Low" Level H = "High" Level L H L H L H L H L H L H L H Output level L H 13) Status 442 D2 H H H L H L H H (L14)) L L 15) L L15) L L 442 E2 H H H L H L H H (L14)) L L H H H H H L L H H L L L L L L Terms Ibb I IN 2 I ST V V bb IN V ST 4 ST GND 1 R GND IGND V OUT IN 3 Vbb IL PROFET OUT 5 VON Input circuit (ESD protection) R IN I ESDZDI1 ZDI2 GND I I ZDI1 6.1 V typ., ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V). 13) 14) Power Transistor off, high impedance Low resistance short Vbb to output may be detected by no-load-detection 15) No current sink capability during undervoltage shutdown Semiconductor Group 6 2003-Oct-01 BTS 442 E2 Status output +5V Overvolt. and reverse batt. protection + V bb V R ST(ON) ST R IN Z R bb IN GND ESDZD Logic V R ST ST GND OUT ESD-Zener diode: 6.1 V typ., max 5 mA; RST(ON) < 250 at 1.6 mA, ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V). PROFET R GND Signal GND Rbb = 120 typ., VZ +Rbb*40 mA = 67 V typ., add RGND, RIN, RST for extended protection Short Circuit detection Fault Condition: VON > 8.3 V typ.; IN high + V bb Open-load detection ON-state diagnostic condition: VON < RON * IL(OL); IN high + V bb V ON OUT Logic unit Short circuit detection ON VON OUT Logic unit Open load detection Inductive and overvoltage output clamp + V bb V Z V GND disconnect ON OUT GND 3 IN Vbb PROFET 4 V bb V IN V ST ST GND 1 V GND OUT 2 VON clamped to 58 V typ. 5 Any kind of load. In case of Input=high is VOUT VIN - VIN(T+) . Due to VGND >0, no VST = low signal available. Semiconductor Group 7 2003-Oct-01 BTS 442 E2 GND disconnect with GND pull up 3 3 IN Vbb PROFET 4 ST GND 1 OUT high 2 IN Vbb PROFET OUT 2 5 5 4 ST GND 1 V V V bb IN ST V V GND bb Any kind of load. If VGND > VIN - VIN(T+) device stays off Due to VGND >0, no VST = low signal available. Inductive Load switch-off energy dissipation E bb E AS Vbb PROFET OUT EL ELoad Vbb disconnect with charged inductive load 3 high 2 IN Vbb PROFET 4 ST GND 1 V OUT IN = 5 ST GND ER bb Energy dissipated in PROFET EAS = Ebb + EL - ER. ELoad < EL, EL = 1/2 * L * I L 2 Semiconductor Group 8 2003-Oct-01 BTS 442 E2 Options Overview all versions: High-side switch, Input protection, ESD protection, load dump and reverse battery protection , protection against loss of ground Type Logic version BTS 442D2 442E2 D X X X X E Overtemperature protection Tj >150 C, latch function16)17) Tj >150 C, with auto-restart on cooling Short-circuit to GND protection switches off when VON>8.3 V typ.16) (when first turned on after approx. 200 s) Open load detection in OFF-state with sensing current 30 A typ. in ON-state with sensing voltage drop across power transistor X X X X X -18) X X X X X X X X X X -18) X - Undervoltage shutdown with auto restart Overvoltage shutdown with auto restart Status feedback for overtemperature short circuit to GND short to Vbb open load undervoltage overvoltage Status output type CMOS Open drain Output negative voltage transient limit (fast inductive load switch off) to Vbb - VON(CL) X X X X Load current limit high level (can handle loads with high inrush currents) medium level low level (better protection of application) Latch except when Vbb -VOUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (VOUT 0 V only if forced externally). So the device remains latched unless Vbb < VON(SC) (see page 4). No latch between turn on and td(SC). 17) With latch function. Reseted by a) Input low, b) Undervoltage, c) Overvoltage 18) Low resistance short V to output may be detected by no-load-detection bb 16) Semiconductor Group 9 2003-Oct-01 BTS 442 E2 Timing diagrams Figure 1a: Vbb turn on: Figure 2b: Switching an inductive load IN IN V bb t d(bb IN) ST *) td(ST) V OUT V A OUT ST open drain I t A in case of too early VIN=high the device may not turn on (curve A) td(bb IN) approx. 150 s *) if the time constant of load is too large, open-load-status may occur L IL(OL) t Figure 2a: Switching a lamp, Figure 3a: Turn on into short circuit, IN IN ST ST V OUT V OUT td(SC) I L I L t td(SC) approx. 200s if Vbb - VOUT > 8.3 V typ. t Semiconductor Group 10 2003-Oct-01 BTS 442 E2 Figure 3b: Turn on into overload, Figure 4a: Overtemperature: Reset if Tj IL I L(SCp) IL(SCr) ST V OUT ST T t J t Heating up may require several milliseconds, Vbb - VOUT < 8.3 V typ. Figure 3c: Short circuit while on: Figure 5a: Open load: detection in ON-state, turn on/off to open load IN IN ST ST t d(ST) V OUT V OUT IL I **) t L open t **) current peak approx. 20 s Semiconductor Group 11 2003-Oct-01 BTS 442 E2 Figure 5b: Open load: detection in ON-state, open load occurs in on-state Figure 6b: Undervoltage restart of charge pump VON [V] IN V on VON(CL) off ST t d(ST OL1) t d(ST OL2) V OUT V off V bb(over) V I normal L bb(u rst) bb(o rst) open normal V t bb(under) V bb(u cp) on V bb Vbb [V] td(ST OL1) = tbd s typ., td(ST OL2) = tbd s typ charge pump starts at Vbb(ucp) =6.5 V typ. Figure 6a: Undervoltage: Figure 7a: Overvoltage: IN IN V bb V bb(under) Vbb Vbb(u cp) V bb(u rst) V ON(CL) Vbb(over) V bb(o rst) V V OUT OUT ST open drain ST t t Semiconductor Group 12 2003-Oct-01 BTS 442 E2 Package and Ordering Code All dimensions in mm Standard TO-220AB/5 BTS 442 E2 Ordering code Q67060-S6206-A2 TO-220AB/5, Option E3043 Ordering code BTS 442 E2 E3043 Q67060-S6206-A3 SMD TO-220AB/5, Opt. E3062 Ordering code BTS442E2 E3062A T&R: Q67060-S6206-A4 Semiconductor Group 13 2003-Oct-01 BTS 442 E2 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81669 Munchen (c) Infineon Technologies AG 2001 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in lifesupport devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Semiconductor Group 14 2003-Oct-01 |
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